AR-P 8100 (Phoenix 81) thermal pattern-able positive resist
High-contrast, thermal pattern-able resist for integrated circuit and holographic structure
Process baseline
This diagram shows exemplary process steps for AR-P 8100 resists. All specifications are guideline values which have to be adapted to own specific conditions. For further information on processing,“Detailed instructions for optimum processing of e-beam resists”. For recommendations on waste water treatment and general safety instructions, ”☞General product information on Allresist e-beam resists”.
Handling of materials
Phoenix 81 is not storage-stable at room temperature and should thus be kept cooled at -18 °C. To ensure our high quality demands, this product is only shipped in powder form as PPA polymer at 1g.
Prior to coating, the PPA solution should be adjusted to room temperature. Brief heating has no significant influence on the stability. PPA layers are thermally sensitive, but significant decomposition processes are only observed above temperatures of 120 °C.
NanoFrazor technology
Polyphthalaldehydes (PPA) are thermally structurable resists which were mainly developed for tSPL applications with the NanoFrazor (SwissLitho AG). Key element of this device is a hot needle scanning the resist surface. With each tip, the thermally sensitive PPA evaporates, thereby transferring the desired structures into the layer. Both 10 nm-lines as well as sophis- ticated three-dimensional structures can be written in this way.
The NanoFrazor technology allows writing structures without vacuum conditions. Due to the specific technology, it is also possible to set up the device in a clean laboratory. A cleanroom is required for the coating the substrates with resist Phoenix 81. The write speed of the Na- noFrazor is comparable to the speed of simple electron beam devices for the realization of high-resolution structures.
