Positive E-Beam Resist AR-P 6200series (CSAR 62)

High resolution high contrast EBL resists for integrated circuit & masks

AR-P 6200 series (CSAR 62) on mask blanks

Experts at the HHI Berlin have already tested CSAR 62 on mask blanks (👉 Fig. 1). They immediately achieved a resolution of 50 nm which is an excellent value for masks. To date, 100 nm lines and above are used on masks. Currently test coatings of mask blanks with CSAR 62 are con- ducted, and samples will be offered by our partners to all customers in the near future.

CSAR 2014年開發成功時,位於柏林的電信研究所(Fraunhofer HHI)成功的測試於空白光罩,解析度達50nm(如下圖1), 相較於當時僅100um,表現相當優異.