Positive E-Beam Resist AR-P 6200series (CSAR 62)

High resolution high contrast EBL resists for integrated circuit & masks

Process Instruction

Lift-off structures

Resist CSAR 62 is well suited to generate lift-off structures with a resolution of up to 10 nm. If the dose is increased by a factor of 1.5 - 2, narrow trenches with defined undercut can be fabricated with AR-P 6200.09.

CSAR 62非常識合於浮剝離結構(lift-off), 解析度可達10nm. 以AR 6200.09為例,曝光劑量提高1.5 - 2倍, 細槽溝也可形成下切型結構.

After vapor-deposition of metal and subsequent easy lift-off, metal structures remain

金屬蒸鍍,浮剝離後留下的金屬結構