Chemically Amplified Negative Photoresist AR-N 4340

Highly sensitive negative resist for the production of integrated circuits

AR-N 4340 產品說明

AR-N 4340 為化學放大型,高敏感度光阻,適合各類電路運用.

產品編號: AR-N 4340

產品包裝: (無固定生產排程, 需訂單生產)

250 ml/ /瓶

1,000 ml/ /瓶

出貨: 🔲 4 - 8 週. 徳國運出

🔲 1 週. 國內庫存

Characterization 產品特性

  • i-line, g-line

曝光波長: 寬頻紫外線, i-line (365nm) , g-line (436nm)

  • highest sensitivity, excellent resolution

高敏感度,高解析度.

  • good adhesion, high contrast, chemically enhanced

化學放大型,具高對比,與基板黏著度良好.

  • undercut profiles (lift-off) are possible

可調整成undercut圖案, 可用於lift-off製程.

  • plasma etching resistant

耐各類電漿蝕刻.

  • temperature-stable up to 220 °C after subsequent treatment

調整適合製程可使光阻在220℃高溫維持穩定.

  • novolac with photochemical acid generator and amine-based crosslinking agent

成份含酚醛樹酯,光酸與架橋劑.

  • Safer solvent PGMEA

使用較安全溶劑PGMEA