AR-P 8100 (Phoenix 81) thermal pattern-able positive resist

High-contrast, thermal pattern-able resist for integrated circuit and holographic structure

Characterization

• for tSPL (thermal Scanning Probe Lithography)

• film thickness 20 - 160 nm

• high resolution (< 10 nm) and very high contrast

• very process-stable

• not photosensitive > 300 nm

• well suited for two-layer processes (lift-off)

• for the production of „overlay-patterns“

• application in grey-tone & e-beam lithography

• solution of PPA in safer solvent anisole