AR-N 7720 series Negative e-Beam Resist (CAR type)

High-resolution resist with flat gradation for semiconductor process

Characterization

  • e-beam, deep UV; chemically enhanced (CAR)

化學放大型阻劑,曝光源可為電子束, 深紫外線

  • flat gradation for three-dimensional resist profiles for diffractive optics and holograms

對比度低(<1), 適合繞射光學與全像攝影等需3D立體結構的應用

  • negative-tone with high resolution in the UV-range 248-265 nm and 290-330 nm

在紫外線波長248 - 265 nm及290 - 330nm下曝光為高解析度負型模式

  • plasma etching resistant, temperature-stable up to 140 °C

耐乾蝕刻, 高溫穩性定達140℃

  • novolac, acid generator, crosslinking agent

主要成份含酚醛樹酯, 光酸產生劑,架橋劑等

  • safer solvent PGMEA

溶劑使用較安全的丙二醇甲醚醋酸酯