Protective Coatings SXAR-PC 5000/41

KOH & HF resistant resist for wafer backside protection

Process conditions - One-layer process

This diagram shows exemplary process steps for the protective coating SXAR-PC 5000/41. All specifications are guideline values which must be adapted to own specific conditions.

圖示SXAR-PC 5000/41系列產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整

Processing instructions

Coating:

A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 μm during spin deposition.

塗佈:

建議轉速約1000轉,可得厚度約10um且晶片邊緣有包覆效果.

Etch process:

The protective layer is not attacked over hours up to 80℃.

蝕刻:

保護塗層可耐80℃高溫蝕刻幾個小時.

Note:

The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner must be used.

附註:

保護塗層不溶於丙酮或異丙醇. 去除或相關設備清洗需使用指定的稀釋劑