Standard Positive Photoresists AR-P 3740 for sub-um
Sensitive photoresist for the production of highly integrated circuits
It is also possible to develop resists which were only dried at room temperature (24 h). In this case, resists are technically very sensitive, but are however also characterized by high dark erosion. A good development is provided for resists baked at up to 110 °C (AR 300-35, 1 : 1), while developers with higher strength are required for bake temperatures above 120 °C (AR 300-35, 2 : 1). Resist layers tempered at 130 °C are basically non-developable anymore.
Product quick guide 產品快速導覽▶️ EBL resist 電子束微影阻劑▶️ tSPL resist 熱掃描微影阻劑▶️ Conductive coating 導電塗佈▶️ Photoresist 光阻劑▶️ Protective resist 保護塗層▶️ Bottom resist 底層阻劑▶️ Process chemicals 製程化學品