Standard Positive Photoresists AR-P 3740 for sub-um

Sensitive photoresist for the production of highly integrated circuits

It is also possible to develop resists which were only dried at room temperature (24 h). In this case, resists are technically very sensitive, but are however also characterized by high dark erosion. A good development is provided for resists baked at up to 110 °C (AR 300-35, 1 : 1), while developers with higher strength are required for bake temperatures above 120 °C (AR 300-35, 2 : 1). Resist layers tempered at 130 °C are basically non-developable anymore.