Positive E-Beam Resist AR-P 6200series (CSAR 62)
High resolution high contrast EBL resists for integrated circuit & masksCharacterizatione-beam resist, layer thickness. 0,05-1,6 μm (6000-1000 rpm)
電子束微影阻劑,厚度範圍: 0.05-1.6 um@6000-1000rpm
high sensitivity which can be adjusted via the developer
敏感度高,可透過顯影劑調整
highest resolution (< 10 nm) and very high contrast
解析度高(<10nm). 對比高 (14)
highly process-stable, high plasma etching resistance
製程穩定性良好. 耐電漿蝕刻
easy fabrication of lift-off structures
lift-off 結構,製程簡單
poly(α-methyl styrene-co-α-chloroacrylate methylester)
共聚物高分子 α-甲基苯乙烯與甲基丙烯酸甲酯
Safer Solvent Anisole
安全溶劑(anisole).
▶️ Product data 產品資料
▶️ Characterization 產品特性
▶️ Structure & resolution 結構與解析度
Product quick guide 產品快速導覽▶️ EBL resist 電子束微影阻劑▶️ tSPL resist 熱掃描微影阻劑▶️ Conductive coating 導電塗佈▶️ Photoresist 光阻劑▶️ Protective resist 保護塗層▶️ Bottom resist 底層阻劑▶️ Process chemicals 製程化學品