Process parameter
Substrate : 4" Si wafer.
Soft bake : 200 ℃ x 120 sec, hot plate.
Exposure : ZBA 21, 20kV
Development: AR 600-50, 120 sec, 22℃
Process parameter
Substrate : 4" Si wafer.
Soft bake : 200 ℃ x 120 sec, hot plate.
Exposure : ZBA 21, 20kV
Development: AR 600-50, 120 sec, 22℃