AR-P 617 Positive eBeam Lithography Resist

Resists for nanometer lithography, highest resolution, Copolymer 33% MA

Characterization

  • e-beam, deep UV (248 nm)

適合電子束微影, 深紫外線(248 nm)

  • highest resolution, high contrast

高解析度(10nm), 高對比.

  • strong adhesion to glass, silicon and metals

對玻璃, 矽及金屬等基材有良好的接著性

  • 3-4 times more sensitive than PMMA

相較於PMMA阻劑, 敏感度可高出3-4

  • sensitivity can be adjusted via the soft-bake

敏感性能可透過軟考(soft-bake)調整

  • for planarization and multi-layer processes

應用於平坦化及立體結構積層電路

  • temperature-stable up to 240 °C

耐溫240℃

  • copolymer on the basis of methyl methacrylate and methacrylic acid, safer solvent 1-methoxy-2-propanol

使用甲基丙烯酸甲酯與甲基丙烯酸共聚物poly(MMA-co-MA)及較安全溶劑丙二醇甲醚 (PGME-Propylene glycol methyl ether)