AR-P 617 Positive eBeam Lithography Resist
Resists for nanometer lithography, highest resolution, Copolymer 33% MA
Characterization
e-beam, deep UV (248 nm)
適合電子束微影, 深紫外線(248 nm)
highest resolution, high contrast
高解析度(10nm), 高對比.
strong adhesion to glass, silicon and metals
對玻璃, 矽及金屬等基材有良好的接著性
3-4 times more sensitive than PMMA
相較於PMMA阻劑, 敏感度可高出3-4倍
sensitivity can be adjusted via the soft-bake
敏感性能可透過軟考(soft-bake)調整
for planarization and multi-layer processes
應用於平坦化及立體結構積層電路
temperature-stable up to 240 °C
耐溫240℃
copolymer on the basis of methyl methacrylate and methacrylic acid, safer solvent 1-methoxy-2-propanol
使用甲基丙烯酸甲酯與甲基丙烯酸共聚物poly(MMA-co-MA)及較安全溶劑丙二醇甲醚 (PGME-Propylene glycol methyl ether)
▶️ Product data 產品資料
▶️ Characterization 產品特性
▶️ Film thickness vs solid content
▶️ Structure & resolution 結構解析度