Characterization

• e-beam, deep UV, i-line

曝光源可為電子束, 深紫外線, 紫外線(i-line)

• very high contrast, excellent transfer of structures, high-precision edges

高對比, 良好的圖案轉移,結構邊緣精確

• mix & match processes between e-beam and UV exposure 248-365 nm

適合電子束與紫外線 (248 - 365 nm)的混搭製程

• highest resolution, very process-stable (no CAR)

非化學放大型,但解析度高,製程穩定

• plasma etching resistant, temp.-stable up to 140 °C

耐乾蝕刻, 高溫穩性定達140℃

• novolac, organic cross-linking agent

主要成份含酚醛樹酯, 有機物架橋劑等

• safer solvent PGMEA

溶劑使用較安全的丙二醇甲醚醋酸酯