Characterization

• e-beam, deep UV, i-line, g-line

曝光源可為電子束, 深紫外線, 紫外線(i-line, g-line)

• intermediate sensitivity

敏感度為中等程度

• mix & match-processes between e-beam and UV exposure 310 – 450 nm, positive or negative depending on the exposure wavelength chosen

適合電子束與紫外線 (310-450 nm)的混搭製程. 依曝光波長決定其是為正型或負型特性

• high resolution, process-stable (no CAR)

非化學放大型,但解析度高,製程穩定

• plasma etching resistant, temp.-stable up to 120 °C

耐乾蝕刻, 高溫穩定達120℃

• novolac, naphthoquin. diazide, organic cross-linking agent.

主要成份含酚醛樹酯, 疊氮基萘醌, 有機物架橋劑等

• safer solvent PGMEA

溶劑使用較安全的丙二醇甲醚醋酸酯