AR-P 8100 (Phoenix 81) thermal pattern-able positive resist
High-contrast, thermal pattern-able resist for integrated circuit and holographic structure
Characterization
for tSPL (thermal Scanning Probe Lithography)
film thickness 20 - 160 nm
high resolution (< 10 nm) and very high contrast
very process-stable
not photosensitive > 300 nm
well suited for two-layer processes (lift-off)
for the production of „overlay-patterns“
application in grey-tone & e-beam lithography
solution of PPA in safer solvent anisole