Negative e-Beam Resist AR-N 7520-new series
High-resolution EBL resists for mix & match in semiconductor process
Process baseline
This diagram shows exemplary process steps for resists of AR-N 7520-new series. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉 “Detailed instructions for optimum processing of e-beam resists”. For recommendations on wastewater treatment and general safety instructions, 👉 ”General product information on Allresist e-beam resists”.
圖示AR-N 7520-new series 阻劑產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整
Processing instructions
These resists are predestined for e-beam exposure, but also suitable for UV exposure. Mix & match processes are possible if both exposure methods are carefully coordinated. During e-beam exposure, the resist works in a negative mode.
The resist works also in a negative mode with deep UV (248-270 nm) or mid-UV (290-365) exposure. If a further tempering step (85 °C, 2 min hot plate) is added after image-wise exposure, the sensitivity can be slightly enhanced.
The developer dilution should be adjusted with DI water such that the development time is in a range between 20 s and 120 s. By dilution of the developer, contrast and development rate can be influenced to a large degree. A stronger dilution results in an increased contrast and a reduced development rate.
AR-N 7520-new系列是設計為電子束微影阻劑,但也適合於紫外線曝光. 兩種曝光參數經適當調配,可用於半導體混搭製程(mix & match).阻劑在電子束曝光下為負型模式.
在深紫外線(248-270 nm)及中紫外線(290-365 nm)下曝光亦為負型模式. 曝後烤(85℃ x 2 min, 熱板)可些微增加敏感度.
顯影劑濃度視需要以純水調整,建議的顯影時間為 20 – 120 sec.
稀釋顯影劑對對比度及顯影率影響很大. 過度稀釋會降低對比度及顯影速率.