AR 300-76 Remover Product Brief 產品說明

光阻及電子束微影阻劑專用的去除劑依成份分為下列產品編號:

AR 300-70 / AR 300-72 / AR 300-73 / AR 300-76 / AR 600-71 

產品包裝:

2.5    L /瓶

其它包裝可依客戶需求增加.

出貨: ☑️   2 - 4 週. 徳國運出

           🔲          1 週. 國內庫存

Characterization 產品特性

• organic solvents

有機溶劑

• AR 300-76 main component: dimethyl adipate

主要成分: 己二酸二甲酯. 

AR remover introduction

Characterization 產品特性

• aqueous-alkaline solution (AR 300-73) or organic solvents (all others)

依成分有鹼性水溶液(AR 300-73)及有機溶劑(其他品項).

• Remover recommendations after tempering:

去除劑應用,以阻劑硬烤溫度區分如下

1. photoresists up to 180 °C: AR 600-71, 300-76

光阻硬拷 180℃ : AR 600-71, AR 300-76

2. photoresists up to 200 °C: AR 300-76, 300-71

光阻硬烤 200℃: AR 300-76, AR 300-71

3. PMMAs up to 200 °C: AR 600-71, 300-76

PMMA阻劑 200℃: AR 600-71, AR 300-76

4. copolymers up to 210 °C: AR 600-71, 300-76

共聚物阻劑 210℃: AR 600-71, AR 300-76

5. CSAR 62 up to 200 °C: AR 600-71, 300-76

CSAR 62共聚物阻劑 200℃ : AR 600-71, AR 300-76

6. novolac e-beam resists 150 °C: AR 300-73, 300-76

酚醛電子束微影阻劑 150℃ : AR 300-73, 300-76

Processing instructions for removers

Substrates coated with resist are exposed to the effect of the remover by immersion (puddle or dip). To reduce the dissolution time for tempered layers, removers AR 300-70, 300-72 and 300-76 may be heated to up to 80 °C, remover AR 300-73 to up to 50 °C or megasound may be helpful in this case. It is recommended to rinse off the remover with DI water, clean remover or with a suitable thinner. A stripping of very hard-baked layers (> 220 °C) with remover is hardly possible any more. In this case, oxidizing acids or oxygen plasma may be used for stripping. Further detailed remover specifications for a large variety of resists are listed on the following pages.

已塗有阻劑的基板浸泡於(puddle or dip)去除劑,將阻劑膜剝除. 為降低阻劑膜溶解時間, 去除劑AR 300-70, AR 300-72及AR 300-76可加熱至80℃; AR 300-73可加熱至50℃. 或施以兆聲波(megasonic)輔助清洗.

去除程序後,建議以DI water或稀釋液以清洗殘留去除液.

對於經過大於220℃高溫硬烤的阻劑,去除劑基苯上已很難作用,可使用酸性氧化或電漿去除.

更詳細及適用範圍,請參考下頁.