Characterization

• high-resolution e-beam resist (10 nm)

高解析度電子束微影阻劑,解析度可達10nm.

• etch-stable resist structures available in two film thicknesses

抗蝕刻能力穩定, 三種厚度範圍產品

• comparable to HSQ, but higher process stability, easier to remove, considerably higher shelf life

類似於HSQ,但製程較為穩定,也較容易去除且俱有較長的有效期

• sensitivity is increased by a factor of 20 if an additional tempering step is applied

增加曝後烤步驟可提高敏感度達20倍

• silsesquioxane dissolved in 1-methoxy-2-propanol

主要成份為矽倍半氧烷類溶於丙二醇甲醚(PGME)