Novolac-based e-beam resists possess other surface properties than CSAR 62 or PMMA. For this reason, AR-PC 5091.02 was designed with a different solvent composition. E-beam resist AR-N 7700.08 was at first spin coated on glass, dried, coated with Electra 92 and baked at 50 °C. After irradiation, the Electra layer was removed within 1 minute with water and the e-beam resist then developed. The resulting resolution of 60 nm is very high for chemically amplified resists.

相較於CSAR 62或PMMA等EBL 阻劑,酚醛系阻劑有不同的表面特性,因此AR-PC 5091.02使用不同比例的混合溶劑. 上圖實驗程序如下:

1. 在玻璃上塗佈AR-N 7700.08, 軟烤乾燥.

2.  塗佈Electra 92並以50℃烘烤.

3. 電子束曝光後, 去除Electra 92 (DI water x 1 min)

4. 顯影.

結果顯示負型化學放大阻劑可得60nm的高解析度