Chemically Amplified Negative Photoresist AR-N 4340
Highly sensitive negative resist for the production of integrated circuits
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TCD vs. bake temperature
Linearity
Up to a line width of 0.7 μm, the linearity is in the desired range (parameter see grafic Focus variation)
Focus variation
The resist achieves a resolution of 0.8 μm optimal focus adjustment REM measurement: Thickness 1,5 μm, PEB 105 °C, 180 s, l-line stepper (NA: 0,65), Developer AR 300-475.
Time for complete development vs. bake
The time for complete development is very short at bake tempe- ratures of < 50 °C, even if weak developers are used. With incre- asing temperature, the time for complete development (TCD) is considerably prolonged. Above a temperature of 120 °C, complete development of the resist is no longer possible.
Development recommendations
Samples were dried at 85 °C and crosslinked at temperatures as indicated (developer: AR 300-475).
The development strongly depends on the bake temperature.
Above a temperature of 130 °C, resist AR-N 4340 is not developable anymore. Optimum temperatures range between 90 and 100 °C.
樣品條件: 軟烤 85℃, 以表列溫度進行曝後考.
顯影劑: AR 300-475
顯影時間與曝後烤溫度有直接關係.
曝後烤溫度達130℃, 光阻就無法被顯開.
最適合曝後烤溫度介於90℃至100℃.
Optimum exposure dose
The optimum exposure dose for 1 μm-bars is 56 mJ/cm2 (parameter see grafic Focus variation)
Sensitivity in dependency on the bake
Samples were both dried and crosslinked at temperatures as indica- ted. The optimum working range is between 90 and 110 °C.
Temperature stability after hardening
Hardened resist bar structures after tempering at 200 °C
The developed structures are stable between 140 -160 °C, depen- ding on the drying procedure (hot plate or oven). Structures can be stabilized up to temperatures of 220 °C by flood exposure and a subsequent bake at 120 °C.
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