Chemically Amplified Negative Photoresist AR-N 4340
Highly sensitive negative resist for the production of integrated circuits
Chemically Amplified Negative Photoresist AR-N 4340
Highly sensitive negative resist for the production of integrated circuits
AR-N 4340 產品說明
AR-N 4340 為化學放大型,高敏感度光阻,適合各類電路運用.
產品編號: AR-N 4340
產品包裝: (無固定生產排程, 需訂單生產)
250 ml/ /瓶
1,000 ml/ /瓶
出貨: 🔲 4 - 8 週. 徳國運出
🔲 1 週. 國內庫存
Characterization 產品特性
i-line, g-line
曝光波長: 寬頻紫外線, i-line (365nm) , g-line (436nm)
highest sensitivity, excellent resolution
高敏感度,高解析度.
good adhesion, high contrast, chemically enhanced
化學放大型,具高對比,與基板黏著度良好.
undercut profiles (lift-off) are possible
可調整成undercut圖案, 可用於lift-off製程.
plasma etching resistant
耐各類電漿蝕刻.
temperature-stable up to 220 °C after subsequent treatment
調整適合製程可使光阻在220℃高溫維持穩定.
novolac with photochemical acid generator and amine-based crosslinking agent
成份含酚醛樹酯,光酸與架橋劑.
Safer solvent PGMEA
使用較安全溶劑PGMEA