Positive PMMA e-Beam Resist AR-P 630– 670 series

PMMA resist 50K – 950K for the production of semiconductor and masks

Characterization

• e-beam, deep UV (248 nm)

阻劑可於電子束, 深紫外線下曝光

•  very good adhesion to glass, silicon and metals

阻劑語玻璃, 矽及金屬的粘著度良好

• 50K 20 % more sensitive than 950K

分子量50k的產品,其敏感度比950k的優約20%

• for planarization and multi-layer processes

適合於平坦化及多層電路製程

• highest resolution, high contrast

產品具高解析度及高對比

• poly(methyl methacrylate) with diff. molecular weights

高分子為不同分子量的PMMA (聚甲基丙烯酸甲酯). 

• 各產品編號使用的溶劑如下:

-  AR-P 631-671 solvent chlorobenzene,(氯苯) flash p. 28 °C 

-  AR-P 632-672 safer solvent anisole, (苯甲醚)flash p. 44 °C

-  AR-P 639-679 safer solvent ethyl lactate,(乳酸乙酯) flash p. 36 °C