Characterization

• high-resolution e-beam resist, also sensitive in EUV (13.5 nm) and DUV (250 nm) range

高解析度電子束微影阻劑,亦可於極紫外線(EUV 13.5 nm),深紫外線(DUV 250 nm)下曝光.

• comparable to HSQ, but with by a factor of 20 higher sensitivity, easier to remove

類似於HSQ,但敏感度高約20倍,也較容易去除

• considerably higher shelf life

較長的有效期限

• silsesquioxane and acid generator dissolved in 1-methoxy-2-propanol

主要成份為矽倍半氧烷及光酸產生劑溶於丙二醇甲醚(PGME)