Positive E-Beam Resist AR-P 6200series (CSAR 62)

• e-beam resist, layer thickness. 0,05-1,6 μm (6000-1000 rpm)

電子束微影阻劑,厚度範圍: 0.05-1.6 um@6000-1000rpm

• high sensitivity which can be adjusted via the developer

敏感度高,可透過顯影劑調整

• highest resolution (< 10 nm) and very high contrast

解析度高(<10nm). 對比高 (14)

• highly process-stable, high plasma etching resistance

製程穩定性良好. 耐電漿蝕刻

• easy fabrication of lift-off structures

lift-off 結構,製程簡單

• poly(α-methyl styrene-co-α-chloroacrylate methylester)

共聚物高分子 α-甲基苯乙烯與甲基丙烯酸甲酯 

• Safer Solvent Anisole

安全溶劑(anisole).