Protective Coatings SXAR-PC 5000/41
KOH & HF resistant resist for wafer backside protection
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Process conditions - One-layer process
This diagram shows exemplary process steps for the protective coating SXAR-PC 5000/41. All specifications are guideline values which must be adapted to own specific conditions.
圖示SXAR-PC 5000/41系列產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整
Processing instructions
Coating:
A spin speed of 1000 rpm is recommended, since wafer edges are optimally protected due to the slight wrapping effect at a film thickness of approx. 10 μm during spin deposition.
塗佈:
建議轉速約1000轉,可得厚度約10um且晶片邊緣有包覆效果.
Etch process:
The protective layer is not attacked over hours.
蝕刻:
保護塗層可耐蝕刻幾個小時.
Note:
The protective film is not dissolved in acetone or isopropanol. For removal or cleaning of equipment, the respective thinner must be used.
附註:
保護塗層不溶於丙酮或異丙醇. 去除或相關設備清洗需使用指定的稀釋劑
SXAR-PC 5000/41 protective coating
▶️ one-layer process baseline 製程參數
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