AR-N 7700 series Negative e-Beam Resist (CAR type)
High-resolution resist with steep gradation for semiconductor process
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Characterization
e-beam, deep UV; chemically enhanced (CAR)
化學放大型阻劑,曝光源可為電子束, 深紫外線
7700: high contrast for digital reproduction with excellent sensitivity
高對比度, 高敏感度
negative-tone with high resolution in the UV range 248-265 nm and 290-330 nm
在紫外線波長248 - 265 nm及290 - 330nm下曝光為負型模式
plasma etching resistant, temp. stable up to 140 °C
耐乾蝕刻, 高溫穩性定達140℃
novolac, acid generator, cross-linking agent
主要成份含酚醛樹酯, 光酸產生劑,架橋劑等
safer solvent PGMEA
溶劑使用較安全的丙二醇甲醚醋酸酯
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