Process instruction
These resists are predestined for e-beam exposure, but also suitable for UV exposure. Mix & match processes are possible, if both exposure methods are carefully coordinated.
During e-beam exposure, the resist works in a negative mode. If these resists are exposed to UV, they also work in a negative mode if image-wise exposure is performed at 310 to 365 nm, followed by flood exposure at > 365 nm (optimum g-line).
The exposure dose is in this case roughly 100 mJ/㎠ (i-line) for a film thickness of 400 nm. With an additional tempering step (85 °C, 2 min hot plate) after image-wise exposure, the sensitivity can be slightly increased.
A positive image is obtained after image-wise UV exposure at 365 - 450 nm without subsequent flood exposure.
The developer dilution should be adjusted with DI water in such a way that the development time is in a range of 30 and 120 s at 21 – 23 °C.
AR-N 7500系列是設計為電子束微影阻劑,但也適合於紫外線曝光. 兩種曝光參數經適當調配,可用於半導體混搭製程(mix & match).
阻劑在電子束曝光下為負型模式. 在紫外線波長310 - 365下曝光,其作用亦為負型模式, 通常需以g-line加曝(波長>365nm).
膜厚400nm在紫外光i-line下曝光,約需100mJ/㎠的劑量. 曝光後在熱板以85℃ x 2 min進行曝後烤可提、高敏感度.
如果在紫外線365 - 450nm下曝光且不做加曝流程,則阻劑呈現正型模式.
顯影劑濃度視需要以純水調整,建議的顯影時間,溫度為20 – 120 sec, 21 – 23℃.
