AR-P 8100 (Phoenix 81) thermal pattern-able positive resist
High-contrast, thermal pattern-able resist for integrated circuit and holographic structure
Embedded Files
Structure of grey-tone interferenz
Process parameter
Substrate: Si wafer
Soft bake: 110℃ x 2 mins, hot plate
Structuring: NanoFrazor
Resist structures
Process chemicals
Adhesion promoter: AR 300 new/HMDS
Thinner: AR 600-02
Remover: AR 600-01 / AR 600-02
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