AR-P 8100 (Phoenix 81) thermal pattern-able positive resist

High-contrast, thermal pattern-able resist for integrated circuit and holographic structure

2-Layer process - baseline


  1. Coating

At first, AR-P 617.03 is coated and tempered. After cooling to room temperature, Phoenix 81 is applied as top resist. The layer thickness can be varied in a range between 20 nm and 160 nm. Subsequently, the two-layer system is tempered. The thickness ratio of both layers influences the structural geometry. To obtain a strong lift-off effect, a thin PPA layer and a thick bottom layer is recommended. For a dimensionally accurate pattern transfer however, both layers should be approximately equal in thickness. The entire system has to be optimized with regard to the respective application.

  1. Development

Development of the lower layer exclusively takes place in those areas which were exposed by the NanoFrazor. PPA layers are not attacked by developer AR 600-50. The development is isotropic and proceeds with defined speed. Both the duration of the development and the developer temperature strongly influence the extent of the undercut. The longer the developer exerts its influence and the higher the developer temperature, the more pronounced is the undercut obtained.

  1. Lift off / Removal

Suitable for the final lifting are remover AR 300-76 or AR 600-71.