AR-P 8100 (Phoenix 81) thermal pattern-able positive resist
Even though PPA shows only a very low absorption at a wavelength of 355 nm, a selective ablation with comparatively high sensitivity is nevertheless possible. The structu- res realised here are again characterised by very smooth edges.
0.1 J/cm2, 355 nm ps-laser, single-pulse exposure, 700 nm PPA on Si-wafer
The laser beam can also be used to generate 3D structures. Interference projection through a phase mask allows the production of lattice structures with sinusoidal shape and very low surface roughness.