Dilution application 稀釋程序:
Dilution is performed as follows: 依下列程序進行稀釋:
placing of defined amount of resist, 置入需要的阻劑數量
addition of defined amount of thinner, 加入需要的稀釋劑數量
homogenisation by stirring (both liquids should be mixed quickly), and
Information on dilution 稀釋相關資訊:
Higher dilutions of resists may cause gel formation of the polymers which leads to particle deposition in the resist film during the coating step. Diluted resists should therefore be subjected to ultra-filtration (0.2 μm) prior to use. In most cases it is more advantageous to adjust the desired film thickness by varying the spin speed or to utilize a pre- adjusted resist. Special adjustments of thickness values are possible on request for an additional charge.
稀釋阻劑可能形成高分子的膠狀物, 導致塗布時型成顆粒沈積. 建議使用前以0.2um規格過濾.
Formula for dilutions 稀釋計算式:
Example: Starting with a resist with 35 % solids content (AR-P 3510), a solids content of 31 % is desired. Requested is the amount of thinner AR 300-12 in g which has to be added to 100 g resist with 35 % solids content (mass m in g, solids content c /100).