AR-N 4600 series (Atlas 46) negative photoresist for high film thickness

for the application of electroplating, micro-systems and LIGA < 20 μm

Reference data for process tuning

Additional information


Layer thickness values of Atlas R and Atlas S are pre-adjusted to 10 μm at a spin speed of 1000 rpm. It is recommended to perform the subsequent tempering step on the hotplate at 95 °C for 5 min. Temperature ramps or stepwise drying, e.g., 65 °C for 2 minutes, followed by 95 °C for 4 minutes, can improve the resolution.

Both resists can be structured by i-line or broadband UV exposure. Prior to irradiation, substrates should be cooled to room temperature. It is recommended to perform the following tempering step for cross-linking on the hotplate at 105 °C for 2 min.

Ramps or stepwise cross-linking procedures like e.g. 65 °C for 2 minutes, followed by 95 °C for 7 minutes and 105 °C for 2 minutes, can improve the resolution. In general, the stability of resists increases with higher temperatures and longer bake times, but this requires on the other side longer development times. The use of temperature ramps is also recommended for cooling since cooling too fast may result in stress cracking.

Atlas R及Atlas S的厚度是事先調整為轉速1000 rpm時為10um. 接著建議以熱板加熱95℃x5min. 階梯式升溫可改善解析度,例如: 65℃ x 2 min, 再以95℃ x 4 min.

Atlas R及Atlas S曝光波長為寬頻紫外線(broadband UV)或365nm (i-line). 曝光前,晶片應先冷卻至室溫. 曝後烤建議溫度時間為: 105℃ x 2min (熱板). 階梯式曝後烤亦可改善解析度,例如: 65℃ x 2 min, 95℃ x 7 min, 105℃ x 2 min. ㄧ般而言,較高溫度與較長烘烤時間可增加光阻的穩定度, 但同時也需要較長的顯影的時間.



AR 300-12 is recommended as standard developer, but also AR 600-07 (fast development) or AR 600-70 (gentle development) is suitable. If AR-N 4600-10 (S) is used for development, no dark erosion is observed even after comparably long development times. If the development with AR 300-12 is performed for too long, increased dark erosion of AR-N 4650-10 may result, and a too long development with AR 600-70 can even cause complete removal.

Stopper AR 600-60 is recommended for a particularly residue-free rinsing after development, followed by rinsing with DI water. It is also possible to rinse resist layers immediately after development directly with DI water and to dry them on the hotplate.

The sensitivity for a layer thickness of 10 μm is about 110 – 160 mJ/cm2 in the broadband UV range (process description on page 3).

顯影劑一般建議使用標準度AR 300-12,但AR 600-70(顯影速度快)及AR 600-07(顯影速度慢)ㄧ樣適用. AR-N 4600-10(S)即使在長的顯影時間也觀察不到顯影劑對光阻蝕刻的問題.

AR-N 4650-10(R)如果在AR 300-12顯影時間過長,就容易發生顯影劑對光阻蝕刻現象, 在AR 600-70顯影時間過長,甚至會使光阻去除.

AR 600-60建議使用於顯影後,接著再以DI water潤洗. 也可以顯影後直接以DI water潤洗,再以熱板乾燥.

曝光敏感度大約是:10um厚度於寬頻紫外線110 – 160 mJ/cm2


Coated structures of AR-N 4650-10 (R) can be removed with thinner AR 300-12 or AR 600-70. Depending on the degree of cross-linking (dose, temperature and bake time), required removal times may be considerably longer than 30 minutes.

AR-N 4650-10(R)的結構可被AR 300-12或AR 600-70去除. 依阻劑架橋程度(曝光劑量,烘烤溫度與時間),一般去除時間會超過30分.