Chemically Amplified Negative Photoresist AR-N 4340
TCD vs. bake temperature
Up to a line width of 0.7 μm, the linearity is in the desired range (parameter see grafic Focus variation)
The resist achieves a resolution of 0.8 μm optimal focus adjustment REM measurement: Thickness 1,5 μm, PEB 105 °C, 180 s, l-line stepper (NA: 0,65), Developer AR 300-475.
Time for complete development vs. bake
The time for complete development is very short at bake tempe- ratures of < 50 °C, even if weak developers are used. With incre- asing temperature, the time for complete development (TCD) is considerably prolonged. Above a temperature of 120 °C, complete development of the resist is no longer possible.
Samples were dried at 85 °C and crosslinked at temperatures as indicated (developer: AR 300-475).
Optimum exposure dose
The optimum exposure dose for 1 μm-bars is 56 mJ/cm2 (parameter see grafic Focus variation)
Sensitivity in dependency on the bake
Samples were both dried and crosslinked at temperatures as indica- ted. The optimum working range is between 90 and 110 °C.
Temperature stability after hardening
Hardened resist bar structures after tempering at 200 °C
The developed structures are stable between 140 -160 °C, depen- ding on the drying procedure (hot plate or oven). Structures can be stabilized up to temperatures of 220 °C by flood exposure and a subsequent bake at 120 °C.