Medusa 82 UV silsesquioxane based Electron Beam Resist

High-resolution, etch-stable, negative tone, for EBL EUV & DUV, HSQ compatible

Processing instructions

Medusa 82 and Medusa 82 UV can both be processed under similar conditions (annealing, development, removal), but they differ with respect to their sensitivity. Resist Medusa 82 UV contains a photoacid generator to increase the sensitivity and is already 20 times more sensitive if normal process conditions (without post exposure bake) are used. This is especially important für sensitive substrates which might be damaged by an additional heat treatment. Fig. 4 shows a comparison of both resists at different acceleration voltages without post exposure bake:

Medusa 82與Medusa 82 UV製程參數類似,如烘烤,顯影,去除等. 差異主要在於敏感度. Medusa 82 UV的配方含光酸產生劑,在無曝後烤的ㄧ般製程,其敏感度已高出20倍. 這個特性對溫度敏感的基板非常重要,可避免因曝後烤的高溫造成異常. 下圖4為兩種阻劑在無曝後烤及不同加速電壓的比較. Medusa 82為藍色,Medusa 82 UV為橘色. 左下圖加速電壓為30kV;右下圖為100kV.

Figure 4: Comparison of the sensitivity of SX AR-N 8200.06/1 (blue) and SX AR-N 8250.06/2 (orange); on the left side at 30 kV, on the right at 100 kV acceleration voltage. Development was performed in AR 300-44, 90 s, 23 °C and without post exposure bake.

For Medusa 82 UV, an additional tempering step after exposure does not result in a further increase in sensitivity:

增加曝後烤不會提高Medusa 82 UV的敏感度, 如下圖5

Also AR 300-46, AR 300-47 or AR 300-73 can be used for the development of Medusa 82 UV. The different developer concentrations however influence the required development time and the required dose.

顯影劑AR 300-46, AR 300-47AR 300-73皆適用,但濃度不同,所需顯影時間及曝光劑量也隨著改變