Positive E-Beam Resist AR-P 6200series (CSAR 62)

High resolution high contrast EBL resists for integrated circuit & masks

Process Instruction

E-beam exposure:

The required e-beam exposure dose for structural imaging mainly depends on the desired minimum structure size, the developer, the acceleration voltage (1 - 100 kV), and the film thickness.

The exposure dose for AR-P 6200.09 was in this experiment (👉 diagram comparison of CSAR 62 and PMMA) 55 μC/cm2 (dose to clear D0, 30 kV, 170 nm layer, developer AR 600-546, si wafer). The contrast was determined here to 14.2.

CSAR 62 is thus 3x more sensitive as compared to the standard PMMA resist AR-P 679.03 (developed in AR 600-56), or 6x more sensitive if developed in AR 600- 60. Also the contrast is higher by a factor of 2 and 1.4, respectively.

An additional increase in sensitivity due to addition of sensitivity-enhancing components occurs already during exposure. A post-exposure bake is thus not required.

For the fabrication of 10-nm trenches (174 nm film, 100n pitch), AR 6200.09 requires a dose of approx. 220 pC/cm (30 kV, developer AR 600-546)

曝光劑量的選擇與結構,厚度,顯影劑及加速電壓(1-100kV)有關. 左下圖為AR-P 6200.09, 在矽晶圓上塗佈厚度170nm, 30kV加速電壓,曝光劑量55uC/cm2, 顯影劑為AR 600-546. 計算對比為14.2. 相較於PMMA AR-P 679.03於顯影劑AR 600-56(對比為2), 敏感度高出3. 如果AR-P 679.03AR 600-60顯影(對比為1.4),則敏感度為6.


右下圖為AR 6200.09於矽晶圓上形成10nm寬的槽溝(厚度170nm,間距100nm),所需劑量約為220pC/cm (30kV加速電壓,AR 600-546顯影劑)