Positive E-Beam Resist AR-P 6200series (CSAR 62)High resolution high contrast EBL resists for integrated circuit & masks
CSAR 62 Application example
AR-P 6200 (CSAR 62) for highest-resolution lithography
During dry chemical etching, for example in the structuring of silicon nitride, CSAR combines the best of two worlds: It not only allows the use as a high-resolution positive resist similar to PMMA, but also offers a stability which is comparable to novolacs.
It is nonetheless possible to produce trenches with a width of < 100 nm at a film thickness of 800 nm. The high contrast is made possible through the use of our developer AR 600-546. By increasing the irradiation dose, the degree of the generated undercut can be adjusted specifically (👉Fig. 5 +6). Each user can thus select the most favorable profile for his specific lift-off process.
高對比及專用顯影劑AR 600-546,使得在800nm膜厚形成<100nm的溝槽仍然是沒有問題. 下切結構可依曝光強度加以調整,(👉 圖5+6) 使用者可依需求選擇最適合參數.
If circles are irradiated and developed in such thick layers, columns (nanowires) can be produced due to a high metal deposition (evaporation, sputtering or electroplating) (see vertical edges in Fig. 7).