Positive E-Beam Resist AR-P 6200series (CSAR 62)

High resolution high contrast EBL resists for integrated circuit & masks

CSAR 62 Application example

AR-P 6200 (CSAR 62) for highest-resolution lithography

In the work group for nano-structured materials of the MLU Halle, CSAR 62 is mainly used in highest-resolution lithography for the lift-off and as etching mask for dry chemical etching processes. The new resist offers several specific advantages. It achieves the high resolution of PMMA, but at a much lower dose. Due to the high contrast, vertical resist edges are generated which allow a reliable lift-off even with thinner films and ensure a uniform lift-off up to 20 nm:

德國MLU Halle大學的奈米結構材料研究小組將CSAR 62主要用於乾蝕刻製成需要的高解析度浮剝離阻劑. 此新型阻劑提供的優點包括:

低曝光劑量. 相較於高解析度PMMA阻劑, CSAR 62曝光劑量低很多.

高對比度,可型成垂直邊緣結構. 此優點在低膜厚阻劑仍可維持穩定的懸剝離製程. 如圖20nm寬的金屬懸浮剝離製程.

The goal in the lift-off of metal structures is however not always to go beyond the limits of resolution. Typical applications for example in the contacting of nanowires rather require dimensions in a range of 30-50 nm, which can also be realized with other resists. The „resolution reserve“ of CSAR 62 however allows for significantly improved structure accuracy and faster design with less iteration:

使用懸浮剝離製程的金屬結構,不見得都需要用到高解析度的阻劑: 像奈米線ㄧ般介於30-50nm, 其它阻劑也可達到. CSAR 62的解析度優點還可改善結構的精確性,更不用談其加速產品的設計流程的優勢.

During dry chemical etching, for example in the structuring of silicon nitride, CSAR combines the best of two worlds: It not only allows the use as a high-resolution positive resist similar to PMMA, but also offers a stability which is comparable to novolacs.

This facilitates the production of pattern with sharp edges that provide the required etch stability without the disturbing faceting at the edges which otherwise occurs frequently. CSAR 62 is normally used for films with thickness values between 50 and 300 nm. Intense plasma etching for the fabrication of deep etch structures however requires significantly thicker resist layers and places special demands on resolution and contrast. Resist AR-P 6200.18 was thus designed for high layer thicknesses of 0.6-1.6 μm and is particularly well suited for the realization of high metal structures with lift-off, deep plasma etching processes or nanowires.

在乾蝕刻的製程,例如氮化矽的圖案,CSAR62同時具有如PMMA阻劑的高解析度,及酚醛系的安定性. 這特性使圖案邊緣明確,,提高蝕刻的穩定性.

CSAR 62通常用於膜厚50 – 300 nm之間. 但高深度結構的高強度電漿蝕刻需高厚度阻劑同時具備高解析度及高對比等特性.

AR-P 6200.18厚度範圍0.6 – 1.6 um,非常適合高厚度金屬的懸浮剝離(如下圖5), 深乾時刻及奈米線等製程.

It is nonetheless possible to produce trenches with a width of < 100 nm at a film thickness of 800 nm. The high contrast is made possible through the use of our developer AR 600-546. By increasing the irradiation dose, the degree of the generated undercut can be adjusted specifically (👉Fig. 5 +6). Each user can thus select the most favorable profile for his specific lift-off process.

高對比及專用顯影劑AR 600-546,使得在800nm膜厚形成<100nm的溝槽仍然是沒有問題. 下切結構可依曝光強度加以調整,(👉 圖5+6) 使用者可依需求選擇最適合參數.

If circles are irradiated and developed in such thick layers, columns (nanowires) can be produced due to a high metal deposition (evaporation, sputtering or electroplating) (see vertical edges in Fig. 7).

如果在高膜厚可形成圖案,金屬高柱可直接以蒸鍍,濺鍍,電鍍等方法沉積. (圖7)