Positive E-Beam Resist AR-P 6200series (CSAR 62)

High resolution high contrast EBL resists for integrated circuit & masks

Application examples for CSAR 62

CSAR 62 – Development at lower temperatures:

The sensitivity of CSAR 62 is strongly influenced by the choice of the developer. In comparison to the standard developer AR 600-546, the sensitivity can almost be increased tenfold if AR600-548 is used which is however accompanied by an incipient erosion of unexposed resist areas. This is tolerable to a certain extent: If, for example, always 10% of the layer is lost, can this effect be compensated for in advance. Erosion can also be avoided if the development is carried out at lower temperatures, but this is again associated with a certain loss of the previously gained sensitivity. It thus comes down to the fact that an optimization of the process is required. The lower temperatures offer, due to the gentler development step, the possibility to increase the contrast or reduce the edge roughness.

顯影劑對CSAR 62的敏感度影響很大. 使用AR 600-546顯影劑,相較於AR 600-548,敏感度可增加10倍.

AR 600-548會有顯影損失. 一致性的顯影損失,例如10%的膜厚損失,可以事先補償,不會影響太大. 顯影損失也可以低溫顯影加以避免,但是敏感度還是較低.

因此製程參數依需要調整是必要的. 顯影溫度越低,顯影反應越平和,可增加對比及降低結構邊緣的表面粗糙度.

Fig. 14-16 show the sensitivities and resolutions of AR-P 6200.04 at 6 °C and 21 °C (room temperature). Due to the high contrast at 6 °C, a resolution of 6 nm could be achieved.

下圖14-16顯示AR-P 6200.046℃21℃顯影的敏感度與解析度. 由於在低溫顯影的高對比性, 6nm的解析度可於6℃顯影調件下獲得.