AR-N 7720 series Negative e-Beam Resist (CAR type)

High-resolution resist with flat gradation for semiconductor process

Process baseline

This diagram shows exemplary process steps for resists of AR-N 7720 series. All specifications are guideline values which must be adapted to own specific conditions. For further information on processing, 👉“Detailed instructions for optimum processing of e-beam resists”. For recommendations on wastewater treatment and general safety instructions, 👉 ”General product information on Allresist e-beam resists”.

圖示AR-N 7720 series 阻劑產品製程參數的範例. 所有參數為參考值,使用者應依設備環境實際狀況加以調整

Processing instructions

These resists are predestined for e-beam exposure, but also suitable for UV exposure. During e-beam exposure, the resist works in a negative mode.

The exposure dose mainly depends on the acceleration voltage, the substrate and the film thickness. The resist also work in a negative mode after deep UV exposure if the image-wise exposure is performed at a wavelength of 248-265 and 290-330 nm.

A bake step is mandatory after exposure (e-beam/UV) to induce the required crosslinking.

Contrast and development rate strongly depend on the tempering. Recommended is a temperature of 105 °C (hot plate, 2 min), with possible variation of ± 5°C. Higher cross-linking temperatures require stronger developers.

For resist AR-N 7720 it is recommended to add a further tempering step at 60 – 70 °C for 1-3 h in the oven prior to development to avoid possibly occurring roughness of the structures to be developed.

Contrast and development rate can be influenced to a large degree if developer strength and tempering temperature are coordinated accordingly. The general rule is the weaker the developer, the higher is the contrast and the lower the development rate. The development time ideally is about 60 s (30 ... 120 s) at 21 – 23 °C. Shorter times for complete development will attack the cross-linked structures. Own tests with respect to the development process are required.

AR-N 7720系列是設計為電子束微影阻劑,但也適合於紫外線曝光. 在電子束曝光下為負型模式.

曝光劑量與加速電壓,基板種類及膜厚有關. 在深紫外線波長 248-265nm390-330nm下曝光亦為負型模式.

曝後烤為促使阻劑產生架橋的必要程序. 阻劑的對比度與顯影速率與曝後烤有關. 建議的基本參數為105℃ ±5℃在熱板上烤2分鐘. 較高的架橋(曝後烤)溫度需使用較強的顯影劑.


顯影劑的選擇與架橋(曝後烤)溫度的搭配,直接影響對比與顯影速率. ㄧ般的原則是:較弱的顯影劑會有較高的對比與較低的顯影速率. 理想的顯影時間為在21 -23℃下顯影60 sec. (30 – 120 sec). 短時間就完全顯影容易有顯影劑攻擊已架橋的結構. 使用者需對顯影製程進行測試以合乎自身需求.