The exposure dose mainly depends on the acceleration voltage, the substrate and the film thickness. The resist also work in a negative mode after deep UV exposure if the image-wise exposure is performed at a wavelength of 248-265 and 290-330 nm.
A bake step is mandatory after exposure (e-beam/UV) to induce the required cross-linking.
Contrast and development rate strongly depend on the tempering. Recommended is a temperature of 105 °C (hot plate, 2 min), with possible variation of ± 5°C. Higher cross-linking temperatures require stronger developers. Contrast and development rate can be influenced to a large degree if developer strength and tempering temperature are coordinated accordingly. The general rule is the weaker the developer, the higher is the contrast and the lower the development rate. The development time ideally is about 60 s (30 ... 120 s) at 21 – 23 °C. Shorter times for complete development will attack the cross-linked structures.
AR-N 7700系列是設計為電子束微影阻劑,但也適合於紫外線曝光. 在電子束曝光下為負型模式.
曝光劑量與加速電壓,基板種類及膜厚有關. 在深紫外線波長 248-265nm及390-330nm下曝光亦為負型模式.