AR-P 5900 photoresist for HF etching

AR-P 5900 photoresist for HF/BOE etching

features:

• broadband UV, i-line, g-line
• highly enhanced adhesion, retarded diffusion of hydrofluoric acid in BOE-mixture 5 : 1 (> 1 h)
• stable against 5 % hydrofluoric acid (> 15 min)
• plasma etching resistant up to 120 °C
• combination of novolac and naphthoquinone diazide, crosslinking agent, adhesion promoter
• safer solvent PGMEA
  • Product series:
    • AR-P 5910