AR-P 5900 photoresist for HF etching

AR-P 5900 photoresist for HF/BOE etching

產品特性:

AR-P 5900 photoresist for HF/BOE etching

features:

  • broadband UV, i-line, g-line
  • highly enhanced adhesion, retarded diffusion of hydrofluoric acid in BOE-mixture 5 : 1 (> 1 h)
  • stable against 5 % hydrofluoric acid (> 15 min)
  • plasma etching resistant up to 120 °C
  • combination of novolac and naphthoquinone diazide, crosslinking agent, adhesion promoter
  • safer solvent PGMEA
    • Product series:
      • AR-P 5910