AR-N 4200 mid-deep UV photoresist

AR-N 4200 mid & deep UV photoresist for IC fabrication

產品特性:

AR-N 4200 mid & deep UV photoresist for IC fabrication

features:

  • deep UV, i-line
  • high sensitivity, high resolution
  • good adhesion, wide process range
  • undercut profiles (lift-offs) are possible
  • not chemically enhanced
  • plasma etching resistant, temperature-stable
  • novolac with photoactive cross-linking agent
  • safer solvent PGMEA
      • AR-N 4240