features

AR-P 7400 resist for mix & match

產品特性:

    • 電子束微影, 深紫外光, 紫外光, 正形及負形
    • 中等敏感度, 高對比
    • 製程穩定, 耐電漿蝕刻
    • 產品設計為電子束微影
    • 產品也適用於UV曝光(波長 310-450nm)
    • 用於混合匹配製程(mix & match)
    • 主要成份為酚醛樹酯及NQD
    • 採用PGMEA較安全溶劑.
    • 產品系列:
      • AR-P 7400.23

AR-P 7400 resist for mix & match

features:

    • e-beam, deep UV, g-line, i-line: positive and negative
    • intermediate sensitivity
    • process-stable, plasma etching resistant
    • designed for e-beam exposure
    • suitable for UV exposure (λ = 310 - 450 nm)
    • mix & match is possible
    • combination of novolac and naphthoquinone diazide
    • safer solvent PGMEA
    • Product series:
      • AR-P 7400.23