features
AR-P 7400 resist for mix & match
產品特性:
- 電子束微影, 深紫外光, 紫外光, 正形及負形
- 中等敏感度, 高對比
- 製程穩定, 耐電漿蝕刻
- 產品設計為電子束微影
- 產品也適用於UV曝光(波長 310-450nm)
- 用於混合匹配製程(mix & match)
- 主要成份為酚醛樹酯及NQD
- 採用PGMEA較安全溶劑.
- 產品系列:
- AR-P 7400.23
AR-P 7400 resist for mix & match
features:
- e-beam, deep UV, g-line, i-line: positive and negative
- intermediate sensitivity
- process-stable, plasma etching resistant
- designed for e-beam exposure
- suitable for UV exposure (λ = 310 - 450 nm)
- mix & match is possible
- combination of novolac and naphthoquinone diazide
- safer solvent PGMEA
- Product series:
- AR-P 7400.23