g. Process Instructions
For the development of exposed resist films, developers AR 600-546, 600-548 and 600-549 are recommended. As weaker developer, AR 600-546 provides a wider process window. If the stronger developer AR 600-548 is used, the sensitivity can be increased 6-fold to < 10 μC/cm². The intermediate developer AR 600-549 renders the CSAR 62 twice as sensitive as compared to AR 600-546, it shows also no dark erosion and has a contrast of 4.
For immersion development, generally development times of 30 - 60 seconds are recommended. If developer AR 600-546 is used, even after 10 minutes at room temperature no erosion of unexposed areas is detected.
Developer AR 600-548 in contrast attacks resist surfaces already after two minutes visibly. If however the development process is carried out at temperatures of approx. 0 °C, no dark erosion is observed even after 5 minutes (which is however associated with a reduction of sensitivity).
The development procedure should be stopped quickly. For this purpose, the substrate is moved for 30 seconds in stopper AR 600-60. Optionally, the substrate may thereafter be rinsed for 30 seconds with DI water to remove all residual solvent.
Note: Please take into account that rigid rinsing procedures may lead to a collapse of smaller structures (👉see image below).
Danger of collapsed lines after too rigid rinsing
A post-bake for special working steps at max. 130 °C results in a slightly improved etching stability during wet chemical and plasma-chemical processes.