01. ebeam exposure

g. Process Instructions

1. e-Beam exposure

E-beam exposure

The required e-beam exposure dose for structural imaging mainly depends on the desired minimum structure size, the developer, the acceleration voltage (1 - 100 kV), and the film thickness.

The exposure dose for AR-P 6200.09 was in this experiment (👉diagram comparison of CSAR 62 and PMMA) 55 μC/cm² (dose to clear D0, 30 kV, 170 nm layer, developer AR 600-546, si wafer). The contrast was determined

here to 14.2.

AR-P 6200 (CSAR 62) is thus 3x more sensitive as compared to the standard PMMA resist AR-P 679.03 (developed in AR 600-56), or 6x more sensitive if developed in AR 600- 60. Also the contrast is higher by a factor of 2 and 1.4,

respectively.

An additional increase in sensitivity due to addition of sensitivity-enhancing components occurs already during exposure. A post-exposure bake is thus not required. For the fabrication of 10-nm trenches (174 nm film, 100nm pitch), AR 6200.09 requires a dose of approx. 220 pC/cm (30 kV, developer AR 600-546)

Maximum resolution CSAR 62 of 10 nm (180 nm)

Maximum resolution CSAR 62 of 10 nm (180 nm)