01. resolution

i. Comparison vs. ZEP 520A

01. resolution

Structural resolution

The comparison of 90 nm lines of both resists ( Fig. 8 and 9) in the centre of a silicon wafer with a film thickness of 200 nm shows that both CSAR and ZEP are characterised by an excellent structural resolution (trench width of 91 nm, pitch 202 nm) and comparable broad process windows:

Fig. 8 left ZEP 520A, 200 nm, ZED N50, 50kV, 80 μC/cm²

Fig. 9 right AR-P 6200.09, 200 nm, AR 600-546, 50 kV, 85 μC/cm²