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  • Semiconductor Materials
    • EBL resist電子束微影
      • Copolymer AR-P 617
        • AR-P 617 brief
        • AR-P 617 features
        • AR-P 617 Properties I and II
        • AR-P 617 spin curve
        • AR-P 617 process baseline
        • AR-P 617 th co-relation
        • AR-P 617 structure and resolution
        • AR-P 617 liftoff process
        • AR-P 617 reaction mechanism
        • AR-P 617 Planarization
      • Copolymer AR-P 6200(CSAR 62)
        • 6200 brief簡介
        • 6200 Product data
          • 6200 Features
          • 6200 properties
          • 6200 Spin Curve
          • 6200 Structure & Resolution
          • 6200 Process Baseline
          • 6200 Etching Rate
        • 6200 process recipe
          • 6200 fine tune basic
          • 6200 ebeam exposure
          • 6200 development
          • 6200 lift-off structure
          • 6200 high layer & others
        • 6200 Application example
          • App general
          • 6200 Mask blanks
          • 6200 HR litho
          • 6200 2-layer lift-off
          • 6200 square structure
          • 6200 dev at lower temp
          • 6200 written at 100kV
          • 6200 dev for T-gate
          • 6200 Fluorescent film
      • PMMA EBL resist
        • PMMA resist brief
        • PMMA resist features
        • PMMA resist properties
        • PMMA resist spin curve
        • PMMA structure resolution
        • PMMA Process Baseline
        • PMMA 2-layer lift-off
        • PMMA Reaction Mechanism
        • PMMA application example
        • PMMA specification table
      • HSQ compatible resist
        • SX AR-N 8200 (Medusa 82)
          • 8200 brief
          • 8200 features
          • 8200 properties
          • 8200 spin curve
          • 8200 structure&resolution
          • 8200 process baseline
          • 8200 process tuning
        • SX AR-N 8250 (Medusa 82 UV)
          • 8250 brief
          • 8250 features
          • 8250 properties
          • 8250 spin curve
          • 8250 structure&resolution
          • 8250 process baseline
          • 8250 process tuning
      • AR-N 7500 nega EBL resist
        • 7500 brief
        • 7500 features
        • 7500 properties
        • 7500 spin curve
        • 7500 resolution&structure
        • 7500 process baseline
      • AR-N 7520 nega EBL resist
        • 7520 brief
        • 7520 features
        • 7520 properties
        • 7520 spin curve
        • 7520 structure&resolution
        • 7520 process baseline
      • AR-N 7520 new nega EBL resist
        • 7520new brief
        • 7520new features
        • 7520new properties
        • 7520new spin curve
        • 7520new structure&resolution
        • 7520new process baseline
      • AR-N 7700 nega EBL resist
        • AR-N 7700 brief
        • AR-N 7700 features
        • AR-N 7700 properties
        • AR-N 7700 spin curve
        • AR-N 7700 structure&resolution
        • AR-N 7700 process baseline
        • AR-N 7700 proximity effect
      • AR-N 7720 nega EBL resist
        • 7720 brief
        • 7720 features
        • 7720 properties
        • 7720 spin curve
        • 7720 structure&resolution
        • 7720 process baseline
        • 7720 3D structures
    • tSPL resist 熱掃描探針微影
      • tSPL resist brief 簡介
        • 8100 resist-brief
        • PPA polymer
        • PPA solution preparation
      • AR-P 8100 data 產品資料
        • 8100 features
        • 8100 properties
        • 8100 spin curve
        • 8100 resolution&structure
        • 8100 process baseline
        • 8100 2-layer process
      • AR-P 8100 app example
        • 8100 patterned with EBL
        • 8100 patterned with photolitho
        • 8100 patterned with laser
    • Conductive coating導電層
      • AR-PC 5090.02(Electra 92)
        • 5090.02 features
        • 5090.02 properties
        • 5090.02 conductivity
        • 5090.02 dissipation of charges
        • 5090.02 process baseline
        • 5090.02 application vs EBL resist
      • AR-PC 5091.02 (Electra 92)
        • 5091.02 features
        • 5091.02 properties
        • 5091.02 conductivity
        • 5091.02 dissipation of charge
        • 5091.02 process baseline
        • 5091.02 AR-N 7700 on glass
    • Photoresist光阻
      • AR-P 1200 spray PR
        • 1200 properties
        • 1200 spray coater parameters
        • 1200 process baseline
      • AR-P 3100series posi PR
        • 3100 properties
        • 3100 spin curve
        • 3100 structure&resolution
        • 3100 process baseline
        • 3100 data for fine tune
      • AR-P 3200series thick PR
        • 3200 properties
        • 3200 spin curve
        • 3200 structure&resolution
        • 3200 process baseline
        • 3200 data for fine tune
      • AR-P 3500series posi PR
        • 3500 properties
        • 3500 spin curve
        • 3500 structure
        • 3500 process baseline
        • 3500 data for fine tune
      • AR-P 3740 posi PR
        • 3740 properties
        • 3740 spin curve
        • 3740 structure&resolution
        • 3740 process baseline
        • 3740 data for fine tune
      • AR-P 5300series posi PR
        • 5300 properties
        • 5300 spin curve
        • 5300 structure&resolution
        • 5300 process baseline
      • SXAR-P 3500/8 posi PR
        • 3500/8 properties
        • 3500/8 spin curve
        • 3500/8 structure&resolution
        • 3500/8 process baseline
      • AR-N 2200series spray PR
        • 2200 properties
        • 2200 spray coater parameters
        • 2200 process baseline
      • AR-N 4340 CAR
        • 4340 properties
        • 4340 spin curve
        • 4340 resolution&structure
        • 4340 process baseline
        • 4340 data for fine tune
      • AR-N 4400series (CAR 44)
        • 4400 properties
        • 4400 spin curve
        • 4400 structure & resolution
        • 4400 process baseline
        • 4400 data for fine tine
        • 4400 thick layer
        • 4400 rival comparison
      • AR-N 4600 series (Atlas 46)
        • 4600 properties
        • 4600 spin curve
        • 4600 resist structures
        • 4600 process baseline
        • 4600 data for fine tune
        • 4600 Dyed and fluorescent films
    • Protective resist保護阻劑
      • AR-PC 500series
        • 500 properties
        • 500 spin curve
        • 500 application photo
        • 500 process baseline
      • SX AR-PC 5000/41
        • 5000/41 properties
        • 5000/41 spin curve
        • 5000/41 application photo
        • 5000/41 1-layer process baseline
        • 5000/41 2-layer process baseline
    • Bottom resist底層阻劑
      • AR-BR 5400series
      • 5400 properties
      • 5400 spin curve
      • 5400 structure&resolution
      • 5400 2-layer posi-PR process
      • 5400 2-layer nega-PR process」的複本
    • Process chemicals製程化學品
      • Developer 顯影劑
        • AR 300-26
        • AR 300-35
        • AR 300-44
        • AR 300-46
        • AR 300-47
        • AR 300-475
        • AR 600-50
        • AR 600-546
        • AR 600-548
        • AR 600-549
        • AR 600-55
        • AR 600-56
      • Remover 去除劑
        • AR 300-70
        • AR 300-72
        • AR 300-73
        • AR 300-76
        • AR 600-71
      • Adhesion promoter增黏劑
        • AR 300-80
        • HMDS
      • Thinner 稀釋劑
        • AR 300-12
        • AR 600-02
        • AR 600-07
        • AR 600-09
      • Stopper顯影抑制劑
        • AR 600-60
  • Equipments
    • ELO-Epitaxial lift-off
  • Contact us 聯絡我們
    • Contact Us
  • Resist Wiki
Techpoint
  • Home
  • Semiconductor Materials
    • EBL resist電子束微影
      • Copolymer AR-P 617
        • AR-P 617 brief
        • AR-P 617 features
        • AR-P 617 Properties I and II
        • AR-P 617 spin curve
        • AR-P 617 process baseline
        • AR-P 617 th co-relation
        • AR-P 617 structure and resolution
        • AR-P 617 liftoff process
        • AR-P 617 reaction mechanism
        • AR-P 617 Planarization
      • Copolymer AR-P 6200(CSAR 62)
        • 6200 brief簡介
        • 6200 Product data
          • 6200 Features
          • 6200 properties
          • 6200 Spin Curve
          • 6200 Structure & Resolution
          • 6200 Process Baseline
          • 6200 Etching Rate
        • 6200 process recipe
          • 6200 fine tune basic
          • 6200 ebeam exposure
          • 6200 development
          • 6200 lift-off structure
          • 6200 high layer & others
        • 6200 Application example
          • App general
          • 6200 Mask blanks
          • 6200 HR litho
          • 6200 2-layer lift-off
          • 6200 square structure
          • 6200 dev at lower temp
          • 6200 written at 100kV
          • 6200 dev for T-gate
          • 6200 Fluorescent film
      • PMMA EBL resist
        • PMMA resist brief
        • PMMA resist features
        • PMMA resist properties
        • PMMA resist spin curve
        • PMMA structure resolution
        • PMMA Process Baseline
        • PMMA 2-layer lift-off
        • PMMA Reaction Mechanism
        • PMMA application example
        • PMMA specification table
      • HSQ compatible resist
        • SX AR-N 8200 (Medusa 82)
          • 8200 brief
          • 8200 features
          • 8200 properties
          • 8200 spin curve
          • 8200 structure&resolution
          • 8200 process baseline
          • 8200 process tuning
        • SX AR-N 8250 (Medusa 82 UV)
          • 8250 brief
          • 8250 features
          • 8250 properties
          • 8250 spin curve
          • 8250 structure&resolution
          • 8250 process baseline
          • 8250 process tuning
      • AR-N 7500 nega EBL resist
        • 7500 brief
        • 7500 features
        • 7500 properties
        • 7500 spin curve
        • 7500 resolution&structure
        • 7500 process baseline
      • AR-N 7520 nega EBL resist
        • 7520 brief
        • 7520 features
        • 7520 properties
        • 7520 spin curve
        • 7520 structure&resolution
        • 7520 process baseline
      • AR-N 7520 new nega EBL resist
        • 7520new brief
        • 7520new features
        • 7520new properties
        • 7520new spin curve
        • 7520new structure&resolution
        • 7520new process baseline
      • AR-N 7700 nega EBL resist
        • AR-N 7700 brief
        • AR-N 7700 features
        • AR-N 7700 properties
        • AR-N 7700 spin curve
        • AR-N 7700 structure&resolution
        • AR-N 7700 process baseline
        • AR-N 7700 proximity effect
      • AR-N 7720 nega EBL resist
        • 7720 brief
        • 7720 features
        • 7720 properties
        • 7720 spin curve
        • 7720 structure&resolution
        • 7720 process baseline
        • 7720 3D structures
    • tSPL resist 熱掃描探針微影
      • tSPL resist brief 簡介
        • 8100 resist-brief
        • PPA polymer
        • PPA solution preparation
      • AR-P 8100 data 產品資料
        • 8100 features
        • 8100 properties
        • 8100 spin curve
        • 8100 resolution&structure
        • 8100 process baseline
        • 8100 2-layer process
      • AR-P 8100 app example
        • 8100 patterned with EBL
        • 8100 patterned with photolitho
        • 8100 patterned with laser
    • Conductive coating導電層
      • AR-PC 5090.02(Electra 92)
        • 5090.02 features
        • 5090.02 properties
        • 5090.02 conductivity
        • 5090.02 dissipation of charges
        • 5090.02 process baseline
        • 5090.02 application vs EBL resist
      • AR-PC 5091.02 (Electra 92)
        • 5091.02 features
        • 5091.02 properties
        • 5091.02 conductivity
        • 5091.02 dissipation of charge
        • 5091.02 process baseline
        • 5091.02 AR-N 7700 on glass
    • Photoresist光阻
      • AR-P 1200 spray PR
        • 1200 properties
        • 1200 spray coater parameters
        • 1200 process baseline
      • AR-P 3100series posi PR
        • 3100 properties
        • 3100 spin curve
        • 3100 structure&resolution
        • 3100 process baseline
        • 3100 data for fine tune
      • AR-P 3200series thick PR
        • 3200 properties
        • 3200 spin curve
        • 3200 structure&resolution
        • 3200 process baseline
        • 3200 data for fine tune
      • AR-P 3500series posi PR
        • 3500 properties
        • 3500 spin curve
        • 3500 structure
        • 3500 process baseline
        • 3500 data for fine tune
      • AR-P 3740 posi PR
        • 3740 properties
        • 3740 spin curve
        • 3740 structure&resolution
        • 3740 process baseline
        • 3740 data for fine tune
      • AR-P 5300series posi PR
        • 5300 properties
        • 5300 spin curve
        • 5300 structure&resolution
        • 5300 process baseline
      • SXAR-P 3500/8 posi PR
        • 3500/8 properties
        • 3500/8 spin curve
        • 3500/8 structure&resolution
        • 3500/8 process baseline
      • AR-N 2200series spray PR
        • 2200 properties
        • 2200 spray coater parameters
        • 2200 process baseline
      • AR-N 4340 CAR
        • 4340 properties
        • 4340 spin curve
        • 4340 resolution&structure
        • 4340 process baseline
        • 4340 data for fine tune
      • AR-N 4400series (CAR 44)
        • 4400 properties
        • 4400 spin curve
        • 4400 structure & resolution
        • 4400 process baseline
        • 4400 data for fine tine
        • 4400 thick layer
        • 4400 rival comparison
      • AR-N 4600 series (Atlas 46)
        • 4600 properties
        • 4600 spin curve
        • 4600 resist structures
        • 4600 process baseline
        • 4600 data for fine tune
        • 4600 Dyed and fluorescent films
    • Protective resist保護阻劑
      • AR-PC 500series
        • 500 properties
        • 500 spin curve
        • 500 application photo
        • 500 process baseline
      • SX AR-PC 5000/41
        • 5000/41 properties
        • 5000/41 spin curve
        • 5000/41 application photo
        • 5000/41 1-layer process baseline
        • 5000/41 2-layer process baseline
    • Bottom resist底層阻劑
      • AR-BR 5400series
      • 5400 properties
      • 5400 spin curve
      • 5400 structure&resolution
      • 5400 2-layer posi-PR process
      • 5400 2-layer nega-PR process」的複本
    • Process chemicals製程化學品
      • Developer 顯影劑
        • AR 300-26
        • AR 300-35
        • AR 300-44
        • AR 300-46
        • AR 300-47
        • AR 300-475
        • AR 600-50
        • AR 600-546
        • AR 600-548
        • AR 600-549
        • AR 600-55
        • AR 600-56
      • Remover 去除劑
        • AR 300-70
        • AR 300-72
        • AR 300-73
        • AR 300-76
        • AR 600-71
      • Adhesion promoter增黏劑
        • AR 300-80
        • HMDS
      • Thinner 稀釋劑
        • AR 300-12
        • AR 600-02
        • AR 600-07
        • AR 600-09
      • Stopper顯影抑制劑
        • AR 600-60
  • Equipments
    • ELO-Epitaxial lift-off
  • Contact us 聯絡我們
    • Contact Us
  • Resist Wiki
  • More
    • Home
    • Semiconductor Materials
      • EBL resist電子束微影
        • Copolymer AR-P 617
          • AR-P 617 brief
          • AR-P 617 features
          • AR-P 617 Properties I and II
          • AR-P 617 spin curve
          • AR-P 617 process baseline
          • AR-P 617 th co-relation
          • AR-P 617 structure and resolution
          • AR-P 617 liftoff process
          • AR-P 617 reaction mechanism
          • AR-P 617 Planarization
        • Copolymer AR-P 6200(CSAR 62)
          • 6200 brief簡介
          • 6200 Product data
            • 6200 Features
            • 6200 properties
            • 6200 Spin Curve
            • 6200 Structure & Resolution
            • 6200 Process Baseline
            • 6200 Etching Rate
          • 6200 process recipe
            • 6200 fine tune basic
            • 6200 ebeam exposure
            • 6200 development
            • 6200 lift-off structure
            • 6200 high layer & others
          • 6200 Application example
            • App general
            • 6200 Mask blanks
            • 6200 HR litho
            • 6200 2-layer lift-off
            • 6200 square structure
            • 6200 dev at lower temp
            • 6200 written at 100kV
            • 6200 dev for T-gate
            • 6200 Fluorescent film
        • PMMA EBL resist
          • PMMA resist brief
          • PMMA resist features
          • PMMA resist properties
          • PMMA resist spin curve
          • PMMA structure resolution
          • PMMA Process Baseline
          • PMMA 2-layer lift-off
          • PMMA Reaction Mechanism
          • PMMA application example
          • PMMA specification table
        • HSQ compatible resist
          • SX AR-N 8200 (Medusa 82)
            • 8200 brief
            • 8200 features
            • 8200 properties
            • 8200 spin curve
            • 8200 structure&resolution
            • 8200 process baseline
            • 8200 process tuning
          • SX AR-N 8250 (Medusa 82 UV)
            • 8250 brief
            • 8250 features
            • 8250 properties
            • 8250 spin curve
            • 8250 structure&resolution
            • 8250 process baseline
            • 8250 process tuning
        • AR-N 7500 nega EBL resist
          • 7500 brief
          • 7500 features
          • 7500 properties
          • 7500 spin curve
          • 7500 resolution&structure
          • 7500 process baseline
        • AR-N 7520 nega EBL resist
          • 7520 brief
          • 7520 features
          • 7520 properties
          • 7520 spin curve
          • 7520 structure&resolution
          • 7520 process baseline
        • AR-N 7520 new nega EBL resist
          • 7520new brief
          • 7520new features
          • 7520new properties
          • 7520new spin curve
          • 7520new structure&resolution
          • 7520new process baseline
        • AR-N 7700 nega EBL resist
          • AR-N 7700 brief
          • AR-N 7700 features
          • AR-N 7700 properties
          • AR-N 7700 spin curve
          • AR-N 7700 structure&resolution
          • AR-N 7700 process baseline
          • AR-N 7700 proximity effect
        • AR-N 7720 nega EBL resist
          • 7720 brief
          • 7720 features
          • 7720 properties
          • 7720 spin curve
          • 7720 structure&resolution
          • 7720 process baseline
          • 7720 3D structures
      • tSPL resist 熱掃描探針微影
        • tSPL resist brief 簡介
          • 8100 resist-brief
          • PPA polymer
          • PPA solution preparation
        • AR-P 8100 data 產品資料
          • 8100 features
          • 8100 properties
          • 8100 spin curve
          • 8100 resolution&structure
          • 8100 process baseline
          • 8100 2-layer process
        • AR-P 8100 app example
          • 8100 patterned with EBL
          • 8100 patterned with photolitho
          • 8100 patterned with laser
      • Conductive coating導電層
        • AR-PC 5090.02(Electra 92)
          • 5090.02 features
          • 5090.02 properties
          • 5090.02 conductivity
          • 5090.02 dissipation of charges
          • 5090.02 process baseline
          • 5090.02 application vs EBL resist
        • AR-PC 5091.02 (Electra 92)
          • 5091.02 features
          • 5091.02 properties
          • 5091.02 conductivity
          • 5091.02 dissipation of charge
          • 5091.02 process baseline
          • 5091.02 AR-N 7700 on glass
      • Photoresist光阻
        • AR-P 1200 spray PR
          • 1200 properties
          • 1200 spray coater parameters
          • 1200 process baseline
        • AR-P 3100series posi PR
          • 3100 properties
          • 3100 spin curve
          • 3100 structure&resolution
          • 3100 process baseline
          • 3100 data for fine tune
        • AR-P 3200series thick PR
          • 3200 properties
          • 3200 spin curve
          • 3200 structure&resolution
          • 3200 process baseline
          • 3200 data for fine tune
        • AR-P 3500series posi PR
          • 3500 properties
          • 3500 spin curve
          • 3500 structure
          • 3500 process baseline
          • 3500 data for fine tune
        • AR-P 3740 posi PR
          • 3740 properties
          • 3740 spin curve
          • 3740 structure&resolution
          • 3740 process baseline
          • 3740 data for fine tune
        • AR-P 5300series posi PR
          • 5300 properties
          • 5300 spin curve
          • 5300 structure&resolution
          • 5300 process baseline
        • SXAR-P 3500/8 posi PR
          • 3500/8 properties
          • 3500/8 spin curve
          • 3500/8 structure&resolution
          • 3500/8 process baseline
        • AR-N 2200series spray PR
          • 2200 properties
          • 2200 spray coater parameters
          • 2200 process baseline
        • AR-N 4340 CAR
          • 4340 properties
          • 4340 spin curve
          • 4340 resolution&structure
          • 4340 process baseline
          • 4340 data for fine tune
        • AR-N 4400series (CAR 44)
          • 4400 properties
          • 4400 spin curve
          • 4400 structure & resolution
          • 4400 process baseline
          • 4400 data for fine tine
          • 4400 thick layer
          • 4400 rival comparison
        • AR-N 4600 series (Atlas 46)
          • 4600 properties
          • 4600 spin curve
          • 4600 resist structures
          • 4600 process baseline
          • 4600 data for fine tune
          • 4600 Dyed and fluorescent films
      • Protective resist保護阻劑
        • AR-PC 500series
          • 500 properties
          • 500 spin curve
          • 500 application photo
          • 500 process baseline
        • SX AR-PC 5000/41
          • 5000/41 properties
          • 5000/41 spin curve
          • 5000/41 application photo
          • 5000/41 1-layer process baseline
          • 5000/41 2-layer process baseline
      • Bottom resist底層阻劑
        • AR-BR 5400series
        • 5400 properties
        • 5400 spin curve
        • 5400 structure&resolution
        • 5400 2-layer posi-PR process
        • 5400 2-layer nega-PR process」的複本
      • Process chemicals製程化學品
        • Developer 顯影劑
          • AR 300-26
          • AR 300-35
          • AR 300-44
          • AR 300-46
          • AR 300-47
          • AR 300-475
          • AR 600-50
          • AR 600-546
          • AR 600-548
          • AR 600-549
          • AR 600-55
          • AR 600-56
        • Remover 去除劑
          • AR 300-70
          • AR 300-72
          • AR 300-73
          • AR 300-76
          • AR 600-71
        • Adhesion promoter增黏劑
          • AR 300-80
          • HMDS
        • Thinner 稀釋劑
          • AR 300-12
          • AR 600-02
          • AR 600-07
          • AR 600-09
        • Stopper顯影抑制劑
          • AR 600-60
    • Equipments
      • ELO-Epitaxial lift-off
    • Contact us 聯絡我們
      • Contact Us
    • Resist Wiki

Product quick view 產品快速瀏覽

▶️  EBL resist 電子束微影阻劑

▶️  tSPL resist 熱掃描微影阻劑

▶️  Conductive coating 導電塗佈

▶️  Photoresist 光阻劑

▶️  Protective resist 保護塗層

▶️  Bottom resist 底層阻劑

▶️  Process chemicals 製程化學品

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Bilingual contents are excerpt and translation from principal’s technical data內容說明為譯自原廠產品技術資料
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